Seminar

Date 2023-05-09 
Time 16:00 
Title Area Selective Deposition; 4th Toolbox for Si Device Nanofabrication 

■ 제 목:  Area Selective Deposition; 4th Toolbox for Si Device Nanofabrication

 

 연 사:  이한보람 교수 (인천대학교 신소재공학과)                 

 

■  일 시:  2023년 5월 9(화) 오후 4시 

 

■  장 소:  응용공학동 1층 영상강의실 

  

■ Host :  강기범 교수 

 

■ Abstract :    
Area-selective atomic layer deposition (AS-ALD) is envisioned to play a key role in next-generation nanofabrication for Si devices. In this presentation, various types of precursor inhibitors studied in our group will be summarized and another opportunity of our AS-ALD will be discussed. The chemical and physical interactions of inhibitors with precursors were successfully explained through theoretical calculations by density functional theory (DFT) and Monte Carlo simulation. Another concept of selective deposition by using a homogeneous precursor inhibitor was proposed for seam-less deposition inside 3D structures. The results could provide insights for the next generation nanofabrication in the semiconductor technology using ALD.