= 아 래 =
1. 일 시 : 2013. 9. 10 (화), 16:00 ~
2. 장 소 : 응용공학동 1층 영상강의실
3. 연 사 : 박상희 박사 (ETRI)
4. 제 목 : Metal Oxide Semiconductor-based Thin-Film Transistors for Displays: Current Status and Perspectives
The recent trends in display may be listed as large UHD TV, AMOLED TV, high resolution mobile display, and new display with novel design or function such as flexible transparent display. Due to combined performances of mobility and stability, large area uniformity, and use of existing facility, oxide TFTs have been intensively researched. The active layer of oxide TFT is metal oxide semiconductor of which conduction band mostly comes from the s orbitals of metals and the valence band is composed of oxygen p orbitals. Most of unique properties of oxide TFT are considered to arise from the intrinsic defects in oxide semiconductor. There have been many challenges in oxide TFTs for commercial applications: controlling carrier concentration, improving bias stability, clarifying origins of negative bias light instability, and developing new materials for high mobility and passivation. While the issues need to be further improved, oxide TFTs have finally been mass produced as the backplane for AMOLED TVs and TFT-LCD tablets. It is crucial to achieve the high mobility BCE TFT with Cu electrode, which is considered as the best device structure for large high resolution displays. With proper selection of active layer, SD etchant, and passivation film, oxide TFTs will quite possibly become one of the most competitive backplane technologies for displays including flexible display. In the presentation, current issues of oxide TFTs and their promise for the driving device of next generation displays will be described in detail.