< Professor Byong-Guk Park >


Professor Byong-Guk Park from the Department of Materials Science and Engineering was selected as the ‘Scientist of the Month’ for October 2019 by the Ministry of Science and ICT and the National Research Foundation of Korea. Professor Park was recognized for his contributions to the advancement of spin-orbit torque (SOT)-based magnetic random access memory (MRAM) technology. He received 10 million KRW in prize money.


A next-generation, non-volatile memory device MRAM consists of thin magnetic films. It can be applied in “logic-in-memory” devices, in which logic and memory functionalities coexist, thus drastically improving the performance of complementary metal-oxide semiconductor (CMOS) processors. Conventional MRAM technology is limited in its ability to increase the operation speed of a memory device while maintaining a high density.


Professor Park tackled this challenge by introducing a new material, antiferromagnet (IrMn), that generates a sizable amount of SOT as well as an exchange-bias field, which makes successful data writing possible without an external magnetic field. This research outcome paved the way for the development of MRAM, which has a simple device structure but features high speeds and density.


Professor Park said, “I feel rewarded to have forwarded the feasibility and applicability of MRAM. I will continue devoting myself to studying further on the development of new materials that can help enhance the performance of memory devices."