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1. 일 시 : 2014. 4. 8 (화), 16:00 ~
2. 장 소 : 응용공학동 1층 영상강의실
3. 연 사 : 이 종 흔 교수 (고려대학교 신소재공학부)
4. 제 목 : Gas sensors using p-type oxide semiconductors : Opportunities and Challenges
Oxide semiconductors are promising material platforms for highly sensitive, cost-effective, and reliable gas sensors. Since 1960s, the n-type oxide semi- conductors such as SnO2, ZnO, TiO2, In2O3, Fe2O3, and WO3 have been intensively studied to detect trace concentrations of harmful, toxic and explosive gases. In contrast, the p-type oxide semiconductors such as NiO, CuO, Cr2O3, and Mn3O4 with different receptor functions, conduction paths, and gas sensing mechanisms, have been barely investigated as chemoresistive materials because of their relatively low gas responses. Moreover, the selective detection of a specific gas using oxide semiconductors remains a challenging issue for the practical applications. In this contribution, new strategies to design high-performance p-type oxide semiconductors with ultrahigh sensitivity and ultrahigh selectivity have been suggested, which include the control of charge carrier concentration by aliovalent doping and the promotion of sensing reaction toward a specific gas by loading or doping catalysts. The p-type oxide semi- conductors with distinctive catalytic activity and electrical property are valuable materials to design gas sensors with new and novel functionalities.