Seminar

Date 2020-11-17 
Time 16:00 
Title Emerging Materials and Device Technologies for Memory and Neuromorphic Devices 

■ 제 목:  Emerging Materials and Device Technologies for Memory and Neuromorphic Devices

 

 연 사:  이장식 교수 (포항공대 신소재공학과)            

 

■  일 시:  2020년 11월 17(화) 오후 4시

 

■ Host : 배병수 교수  

 

■ 참가자 접속정보 (3:50분까지 참가를 부탁드립니다)   

      접속 링크: https://kaist.zoom.us/j/8080757553 

      ID: 808 075 7553

      비밀번호: 2020mse

 

 Abstract : 

Emerging nonvolatile memory technologies have been investigated as next-generation technology to replace conventional flash memory. Recently, active research has been done on the fabrication and characterization of nonvolatile memory devices utilizing emerging materials. In this presentation, a strategy toward design of high-performance memory devices utilizing emerging materials will be discussed in detail with an emphasis on practical applicability, scalability, and reliability. Additionally, neuromorphic computing has attracted much attention due to its power-efficient data processing. To realize efficient neuromorphic hardware systems, the development of reliable and robust synaptic devices is essential. However, the limited performance of the synaptic devices remains as a challenge for realization of neuromorphic hardware systems. In this work analog memory characteristics has been demonstrated in the ferroelectric thin-film transistor based on oxide semiconductor and ferroelectric hafnium oxide layer. In this presentation, a strategy to develop ferroelectric synaptic transistors will be discussed in detail with an emphasis on characterization of synaptic functions and device simulation.