■ Title: Nanoscale Metallization for Semiconductor Devices
■ Speaker: Prof. Young Keun Kim (Dept. of MSE, Korea Univ.)
■ Date and time: 9/24(Tue) 16:00
■ Venue: Applied Engineering Building (W1) 1st Floor, Multimedia Lecture Room
■ Host : Prof. Seokwoo Jeon
■ Abstract :
As the integration of semiconductor devices is increased, the resistance of metallization affects the entire device. Thus, the need for low-resistance metallization is emerging for technology nodes of less than 10 nm. In particular, in the case of the contact plug having the smallest size among the wires, tungsten having excellent resilience to electromigration and thermal stability is utilized, but an resistivity is increasing, thereby requiring a need for an alternative material. Since the resistance of nanoscale materials is proportional to the average free path of the material and increases with the degree of surface and grain scattering, interest in finding new materials that can lower these resistance elements and facilitate the wiring process is increasing. In this presentation, we will discuss changes in materials and processes according to semiconductor development, trends in research and development of low-resistance materials, and manufacturing and characterization of Co and Ru based nanostructures.