Date 2016-05-31 

■ Topic : Low-dimensional Group-IV Nanomaterials

■ Speaker : Prof. Dongmok Whang, (School of AMSE, Sungkyunkwan Univ.)


■ Invitation : Prof. Kim, Sang-Ouk

■ Date & Time : May 31 (Tue) 16:00 

■ Venue : KAIST Applied Engineering B/D(W1), Multimedia Lecture Hall (1st Floor)


■ AbstractLow-dimensional nanomaterials of group-IV materials, including, Si, Ge, C, and their alloy and heterostructures has been grown by chemical vapor deposition (CVD) using metal catalyst. Here 


we present our recent efforts for the metal-free growth of 0D, 1D, and 2D nanostructures of the group-IV materials and their possible applications. In particular, we will focus on the growth of monolayer 


graphene on hydrogen-terminated germanium (Ge) surface with controlled crystallinity. A Ge substrate is a promising candidate for the growth of single-crystal graphene, because of (i) its catalytic 


activity for the catalytic decomposition of the formation of graphitic carbon on the surface; (ii) the extremely low solubility of carbon in Ge even at its melting temperature, enabling growth of complete 


monolayer graphene; (iii) the anisotropic atomic arrangement of single crystal Ge surface, enabling wafer-scale growth of single-crystal graphene; (iv) the availability of a large area single-crystal surface 


via epitaxial Ge growth on Si wafers.