Date 2021-03-05 
Time 16:00 
Title Novel 2D MoS2–based memtransistor device for neuromorphic applications 

■ 제 목:  Novel 2D MoS2–based memtransistor device for neuromorphic applications


 연 사:  조병진 교수 (충북대학교 신소재공학과)  


■  일 시:  2021년 3월 5일 (금) 오후 4시


■ Host : 박상희 교수    


■ 참가자 접속정보 (3:50분까지 참가를 부탁드립니다)   


     접속 링크: 

      ID: 808 075 7553

      비밀번호: 2021mse   


 Abstract : 

Two dimensional (2D) memtransistor can enable a multifunctional modulation such as a tremendous of multilevel state and heterosynaptic plasticity for neuromorphic architecture. Nevertheless, low-powered and reliable memtransistor is highly essential for truly mimicking the complex information processing of the brain.

Herein, we first report on the realization of multi-layered polycrystalline MoS2–based memtransistor by vertically stacking the MoS2 on Nb2O5 insulating layer. The 2D MoS2 and Nb2O5 serve as semiconductor channel and memresistive switching, respectively. Indeed, the MoS2/Nb2O5 heterostructured memtransistor demonstrated both drain- and gate-stimulated synaptic plasticity which efficiently mimics the neuromodulator of a bio-synapse, ultimately leading to heterosynaptic plasticity and wide tunable synaptic weight. The introduction of the Nb2O5 interfacial layer caused a relatively low operation voltage, compared with the previous result about single-crystalline MoS2 memtransistor. Furthermore, we simulated artificial neural network based MNIST (Modified National Institute of Standards and Technology) pattern recognition accuracy to validate the learning and inference efficiency of a potential neuromorphic system with our memtransistor device. Thus, our MoS2/Nb2O5 memtransistor would pave an effective way toward reliable and low-powered neuromorphic system.